Adaptive Wavelet Collocation Method for Simulation of Time Dependent Maxwell's Equations

This paper investigates an adaptive wavelet collocation time domain method for the numerical solution of Maxwell's equations. In this method a computational grid is dynamically adapted at each time step by using the wavelet decomposition of the field at that time instant. In the regions where the fields are highly localized, the method assigns more grid points; and in the regions where the fields are sparse, there will be less grid points. On the adapted grid, update schemes with high spatial order and explicit time stepping are formulated. The method has high compression rate, which substantially reduces the computational cost allowing efficient use of computational resources. This adaptive wavelet collocation method is especially suitable for simulation of guided-wave optical devices

3D-Printed Optics for Wafer-Scale Probing

Mass production of photonic integrated circuits requires high-throughput wafer-level testing. We demonstrate that optical probes equipped with 3D-printed elements allow for efficient coupling of light to etched facets of nanophotonic waveguides. The technique is widely applicable to different integration platforms.Comment: Accepted for presentation at European Conference on Optical Communications (ECOC) 201

Coherent modulation up to 100 GBd 16QAM using silicon-organic hybrid (SOH) devices

We demonstrate the generation of higher-order modulation formats using silicon-based inphase/quadrature (IQ) modulators at symbol rates of up to 100 GBd. Our devices exploit the advantages of silicon-organic hybrid (SOH) integration, which combines silicon-on-insulator waveguides with highly efficient organic electro-optic (EO) cladding materials to enable small drive voltages and sub-millimeter device lengths. In our experiments, we use an SOH IQ modulator with a {\pi}-voltage of 1.6 V to generate 100 GBd 16QAM signals. This is the first time that the 100 GBd mark is reached with an IQ modulator realized on a semiconductor substrate, leading to a single-polarization line rate of 400 Gbit/s. The peak-to-peak drive voltages amount to 1.5 Vpp, corresponding to an electrical energy dissipation in the modulator of only 25 fJ/bit

Electrically packaged silicon-organic hybrid (SOH) I/Q-modulator for 64 GBd operation

Silicon-organic hybrid (SOH) electro-optic (EO) modulators combine small footprint with low operating voltage and hence low power dissipation, thus lending themselves to on-chip integration of large-scale device arrays. Here we demonstrate an electrical packaging concept that enables high-density radio-frequency (RF) interfaces between on-chip SOH devices and external circuits. The concept combines high-resolution $\mathrm{Al_2O_3}$ printed-circuit boards with technically simple metal wire bonds and is amenable to packaging of device arrays with small on-chip bond pad pitches. In a set of experiments, we characterize the performance of the underlying RF building blocks and we demonstrate the viability of the overall concept by generation of high-speed optical communication signals. Achieving line rates (symbols rates) of 128 Gbit/s (64 GBd) using quadrature-phase-shiftkeying (QPSK) modulation and of 160 Gbit/s (40 GBd) using 16-state quadrature-amplitudemodulation (16QAM), we believe that our demonstration represents an important step in bringing SOH modulators from proof-of-concept experiments to deployment in commercial environments

A verified equivalent-circuit model for slotwaveguide modulators

We formulate and experimentally validate an equivalent-circuit model based on distributed elements to describe the electric and electro-optic (EO) properties of travellingwave silicon-organic hybrid (SOH) slot-waveguide modulators. The model allows to reliably predict the small-signal EO frequency response of the modulators exploiting purely electrical measurements of the frequency-dependent RF transmission characteristics. We experimentally verify the validity of our model, and we formulate design guidelines for an optimum trade-off between optical loss due to free-carrier absorption (FCA), electro-optic bandwidth, and {\pi}-voltage of SOH slot-waveguide modulators

Non-sliced Optical Arbitrary Waveform Measurement (OAWM) Using a Silicon Photonic Receiver Chip

Comb-based optical arbitrary waveform measurement (OAWM) techniques can overcome the bandwidth limitations of conventional coherent detection schemes and may have disruptive impact on a wide range of scientific and industrial applications. Over the previous years, different OAWM schemes have been demonstrated, showing the performance and the application potential of the concept in laboratory experiments. However, these demonstrations still relied on discrete fiber-optic components or on combinations of discrete coherent receivers with integrated optical slicing filters that require complex tuning procedures to achieve the desired performance. In this paper, we demonstrate the first wavelength-agnostic OAWM front-end that is integrated on a compact silicon photonic chip and that neither requires slicing filters nor active controls. Our OAWM system comprises four IQ receivers, which are accurately calibrated using a femtosecond mode-locked laser and which offer a total acquisition bandwidth of 170 GHz. Using sinusoidal test signals, we measure a signal-to-noise-and-distortion ratio (SINAD) of 30 dB for the reconstructed signal, which corresponds to an effective number of bits (ENOB) of 4.7 bit, where the underlying electronic analog-to-digital converters (ADC) turn out to be the main limitation. The performance of the OAWM system is further demonstrated by receiving 64QAM data signals at symbol rates of up to 100 GBd, achieving constellation signal-to-noise ratios (CSNR) that are on par with those obtained for conventional coherent receivers. In a theoretical scalability analysis, we show that increasing the channel count of non-sliced OAWM systems can improve both the acquisition bandwidth and the signal quality. We believe that our work represents a key step towards out-of-lab use of highly compact OAWM systems that rely on chip-scale integrated optical front-ends

Comb-based WDM transmission at 10 Tbit/s using a DC-driven quantum-dash mode-locked laser diode

Chip-scale frequency comb generators have the potential to become key building blocks of compact wavelength-division multiplexing (WDM) transceivers in future metropolitan or campus-area networks. Among the various comb generator concepts, quantum-dash (QD) mode-locked laser diodes (MLLD) stand out as a particularly promising option, combining small footprint with simple operation by a DC current and offering flat broadband comb spectra. However, the data transmission performance achieved with QD-MLLD was so far limited by strong phase noise of the individual comb tones, restricting experiments to rather simple modulation formats such as quadrature phase shift keying (QPSK) or requiring hard-ware-based compensation schemes. Here we demonstrate that these limitations can be over-come by digital symbol-wise phase tracking algorithms, avoiding any hardware-based phase-noise compensation. We demonstrate 16QAM dual-polarization WDM transmission on 38 channels at an aggregate net data rate of 10.68 Tbit/s over 75 km of standard single-mode fiber. To the best of our knowledge, this corresponds to the highest data rate achieved through a DC-driven chip-scale comb generator without any hardware-based phase-noise reduction schemes